Simultaneous atomic absorption analysis of multiple elements


Thin layer deposition processes modifies substrate physical properties. For critical applications the most efficient atomic control is required. In this way, microelectronic tools need non-destructive in-situ characterization tool to control variations of the deposition steps under a very high vacuum. Several optical measurement systems have been developed but they are complex, expensive, and difficult to implement by non-specialists.
Our solution allows the simultaneous measurement of several atomic flow in a simple and robust way.


Microelectronics equipements:
  • Epitaxy (MBE, MOCVD…)
  • Thin layer deposition (CVD, Evaporation)